Product Summary

The HY57V641620FTP is a 67,108,864bit CMOS Synchronous DRAM. It is suited for the memory pplications which require wide data I/O and high bandwidth. The HY57V641620FTP is organized as 4banks of 1,048,576x16.

Parametrics

HY57V641620FTP absolute maximum ratings: (1)Storage Temperature:-55℃ to 125℃; (2)Voltage on Any Pin relative to VSS:1.0V to 4.6V; (3)Voltage on VDD supply relative to VSS:-1.0V to 4.6V; (4)Short Circuit Output Current:50 mA; (5)Power Dissipation:1W.

Features

HY57V641620FTP features: (1)Voltage: VDD, VDDQ 3.3V supply voltage; (2)All device pins are compatible with LVTTL interface; (3)54 Pin TSOPII (Lead or Lead Free Package); (4)All inputs and outputs referenced to positive edge of system clock; (5)Data mask function by UDQM, LDQM; (6)Internal four banks operation; (7)Auto refresh and self refresh; (8)4096 Refresh cycles / 64ms ; (9)Programmable CAS Latency; 2, 3 Clocks; (10)Burst Read Single Write operation.

Diagrams

HY57V121620(L)T
HY57V121620(L)T

Other


Data Sheet

Negotiable 
HY57V161610D
HY57V161610D

Other


Data Sheet

Negotiable 
HY57V161610D-I
HY57V161610D-I

Other


Data Sheet

Negotiable 
HY57V161610E
HY57V161610E

Other


Data Sheet

Negotiable 
HY57V161610ET-I
HY57V161610ET-I

Other


Data Sheet

Negotiable 
HY57V161610ETP-I
HY57V161610ETP-I

Other


Data Sheet

Negotiable