(China (Mainland))
Product Summary
The IRG4PH40UD2-E is a insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
Absolute maximum ratings: (1)collector-to-emitter voltage:1200V; (2)pulse collector current:82A; (3)clamped inductive load current:82A; (4)diode continuous forward current:10A; (5)diode maximum forward current:40A; (6)gate-to-emitter voltage:±20V; (7)operating junction and storage temperature range:-55℃ to +150℃.
Features
Features: (1)ultrafast IGBT optimized for high operating frequencies up to 200kHz in resonant mode; (2)IGBT co-packaged with HEXFRED ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits; (3)industry standard TO-247AD package with extended leads.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRG4PH40UD2-EP |
International Rectifier |
IGBT Transistors 1200V UltraFast 5-40kHz |
Data Sheet |
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